Method for forming integrated circuit capacitors including dual

Details Method for forming integrated circuit capacitors including dual Method for forming integrated circuit capacitors including dual

1997-06-27

1999-10-05

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438398, H01L 218242

Patent

active

059638052

ABSTRACT:
A method for forming an integrated circuit capacitor includes the steps of forming a first electrode layer on a substrate wherein the first electrode has a first dopant concentration, and forming a second electrode layer on the first electrode layer opposite the substrate. The second electrode layer has a second dopant concentration different from the first dopant concentration. In addition, a portion of the second electrode layer is converted to a hemispherical grain layer. More particularly, the first dopant concentration is greater than the second dopant concentration. Related structures are also discussed.

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