Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2008-01-08
2008-01-08
Toledo, Fernando L. (Department: 2823)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S757000, C438S791000
Reexamination Certificate
active
10892014
ABSTRACT:
A method for forming a resist protect layer on a semiconductor substrate includes the following steps. An isolation structure is formed on the semiconductor substrate. An original nitride layer having a substantial etch selectivity to the isolation structure is formed over the semiconductor substrate. A photoresist mask is formed for partially covering the original nitride layer. A wet etching is performed to remove the original nitride layer uncovered by the photoresist mask in such a way without causing substantial damage to the isolation structure. As such, the original nitride layer covered by the photoresist mask constitutes the resist protect layer.
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Chen Chia-Lin
Chen Chien-Hao
Chen Shih-Chang
Hsu Ju-Wang
Lee Tze-Liang
Duane Morris LLP
Taiwan Semiconductor Manufacturing Co. Ltd.
Toledo Fernando L.
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