Mask pattern for semiconductor device fabrication, method of...

Radiation imagery chemistry: process – composition – or product th – Imaged product – Multilayer

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C430S330000, C427S154000, C427S372200, C427S340000, C427S384000, C427S385500

Reexamination Certificate

active

10972302

ABSTRACT:
A mask pattern for semiconductor device fabrication comprises a resist pattern formed on a semiconductor substrate, and an interpolymer complex film formd on the resist pattern, wherein the interpolymer complex film includes a network formed by a hydrogen bond between a proton donor polymer and a proton acceptor polymer.

REFERENCES:
patent: 4722882 (1988-02-01), Roberts
patent: 4737425 (1988-04-01), Lin et al.
patent: 4762768 (1988-08-01), Grunwald et al.
patent: 6486058 (2002-11-01), Chun
patent: 6605413 (2003-08-01), Lyons et al.
patent: 7189499 (2007-03-01), Sugeta et al.
patent: 2003/0008968 (2003-01-01), Sugeta et al.
patent: 2004/0067303 (2004-04-01), Sugeta et al.
patent: 11029501 (1999-02-01), None
patent: 2003-131400 (2003-05-01), None
patent: 2004-037570 (2004-02-01), None
patent: 2004-77951 (2004-03-01), None
patent: 10-2004-0015955 (2004-02-01), None
patent: 2004-0026105 (2004-03-01), None
English Abstract Only.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Mask pattern for semiconductor device fabrication, method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Mask pattern for semiconductor device fabrication, method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mask pattern for semiconductor device fabrication, method of... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3939229

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.