Method for forming bond pad openings

Details Method for forming bond pad openings Method for forming bond pad openings

2006-04-18

2006-04-18

Deo, Duy-Vu N. (Department: 1765)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S613000, C438S614000, C438S617000, C438S627000, C257S748000, C257S749000, C257S750000, C257S751000

Reexamination Certificate

active

07030004

ABSTRACT:
The invention provides a method for forming bond pad openings through a three-layer passivation structure, which protects the semiconductor device prior to bonding and packaging. Two passivation layers are formed over a semiconductor device with bond pads formed thereon. Openings are formed through the passivation layers to expose the bond pads. The openings are then filled with a photoresist material before depositing a polyimide layer over the passivation layers. Openings are formed in the polyimide layer so as to expose the filled openings. The photoresist material in the filled openings is subsequently removed to expose the bond pads.

REFERENCES:
patent: 5242864 (1993-09-01), Fassberg et al.
patent: 5960306 (1999-09-01), Hall et al.
patent: 6451681 (2002-09-01), Greer
patent: 6660624 (2003-12-01), Tzeng et al.
patent: 6677226 (2004-01-01), Bowen et al.
patent: 6873047 (2005-03-01), Wada et al.

Affiliated with

Also associated with

Rating

Method for forming bond pad openings does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming bond pad openings, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming bond pad openings will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3605587