Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1999-08-31
2000-09-12
Whitehead, Jr., Carl
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438202, 438203, 438205, 257370, H01L 218238
Patent
active
061177180
ABSTRACT:
A method for forming bipolar junction transistor with high gain via formulation of high voltage device in deep submicron process is disclosed. A substrate including a first part, a second part, and a third part is primarily provided; then, a first well in the first part and a second well in the second part are formed. A plurality of field oxide regions are formed on said substrate; subsequently, two third wells are formed in said third part. The following steps are to form a fourth well in said first well in said first part and two fifth wells in said second well in said second part; and to form a first gate on said first part between said two third wells, and a second gate on said second part between said two fifth wells. Next, a first spacer against said first gate and a second spacer against said second gate are formed. Further, first ions are introduced into said first part to serve as a collector region, and into said third part to serve as a first source/drain region. Finally, second ions are introduced into said first part to form an emitter region and a base region of a bipolar junction transistor, and into said second part to form a second source/drain region.
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Hwang Ching-Chun
Yang Sheng-Hsiung
Jr. Carl Whitehead
Pham Long
United Microelectronics Corp.
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