Method for forming an isolation insulating film for internal ele

Details Method for forming an isolation insulating film for internal ele Method for forming an isolation insulating film for internal ele

1998-05-04

2000-11-28

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438439, H01L 21336, H01L 2176

Patent

active

061534811

ABSTRACT:
There is provided a method for forming element isolation insulating film of a semiconductor device by employing PBL method for reducing the bird's beak and increasing the length of the effective active region. The method comprising the steps of forming a pad-oxide film, a stack-silicon film, and a nitride film on a semiconductor substrate in sequence; forming an element isolation region by selectively patterning the nitride film with an etching process by using an element isolation mask; and forming an element isolation film by field-oxidizing the element isolation region over the semiconductor substrate.

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Hyeokjae Lee et al., A New Leakage Component Caused by the Interaction of Residual Stress and the Relative Position of Poly-Si Gate at Isolation Edge, IEDM, 1995, pp. 683-686.
Stanley Wolf, Ph.D., Silicon Processing For the VLSI ERA, Vol. 2: Process Integration, Lattice Press, 1990, p. 48.

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