Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-06-22
2008-11-18
Smith, Matthew S. (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S627000, C438S648000, C438S656000, C438S680000, C438S685000, C427S255394, C257SE21584, C257SE21170
Reexamination Certificate
active
07452811
ABSTRACT:
In a method for forming a wiring of a semiconductor device using an atomic layer deposition, an insulating interlayer is formed on a substrate. Tantalum amine derivatives represented by a chemical formula Ta(NR1)(NR2R3)3in which R1, R2and R3represent H or C1-C6alkyl group are introduced onto the insulating interlayer. A portion of the tantalum amine derivatives is chemisorbed on the insulating interlayer. The rest of tantalum amine derivatives non-chemisorbed on the insulating interlayer is removed from the insulating interlayer. A reacting gas is introduced onto the insulating interlayer. A ligand in the tantalum amine derivatives chemisorbed on the insulating interlayer is removed from the tantalum amine derivatives by a chemical reaction between the reacting gas and the ligand to form a solid material including tantalum nitride. The solid material is accumulated on the insulating interlayer through repeating the above processes to form a wiring.
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English language abstract for Korean Patent Publication No. 2003-9093.
English language abstract for Japanese Patent Publication No. 2002-193981.
Choi Gil-Heyun
Choi Kyung-In
Kang Sang-Bom
Lee Jong-Myeong
Lee Sang-Woo
Maldonado Julio J.
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
Smith Matthew S.
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