Method for forming a void free via

Details Method for forming a void free via Method for forming a void free via

2008-01-29

2008-01-29

Dickey, Thomas (Department: 2826)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S622000, C438S627000, C257SE21575

Reexamination Certificate

active

07323409

ABSTRACT:
A multilevel metal and via structure is described. The metal conductors include a base or seed layer, a bulk conductor layer, a capping layer, and a barrier layer, and the via structure include a seed layer, a diffusion barrier layer and a metal plug.The via seed layer is controlled to a thickness that discourages the reaction between the via seed layer and the bulk conductor layer. The reaction may result in the formation of harmful voids at the bottom of the vias and is caused by having the via seed metal coming in contact with the bulk conductor through openings in the barrier layer.

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