Method for forming a storage node in a semiconductor memory

Details Method for forming a storage node in a semiconductor memory Method for forming a storage node in a semiconductor memory

1997-05-30

2000-07-11

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438239, 438250, 438253, 438393, 438396, 438648, H01L 218234

Patent

active

060872128

ABSTRACT:
In a process for forming a storage node electrode in the COB structure DRAM, after a titanium nitride film is formed on a surface of a second interlayer insulator film, a node contact hole is formed to penetrate through the titanium nitride film and the underlying interlayer insulator films, and then, an N.sup.+ polysilicon film is formed to cover the titanium nitride film and to fill the node contact hole. This N.sup.+ polysilicon film is patterned by an anisotropic dry etching to form a silicon film pattern. An exposed titanium nitride film which is not covered by the silicon film pattern is converted into a titanium oxide. Thus, a storage node electrode is formed of the silicon film pattern and the titanium nitride film remaining under the silicon film pattern, with no notch being formed in the storage node electrode.

REFERENCES:
patent: 5953609 (1999-09-01), Koyama et al.
Japanese Office Action dated Jun. 2, 1998, with English language translation of Japanese Examiner's comments.

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