Method for forming a silicon nitride layer

Details Method for forming a silicon nitride layer Method for forming a silicon nitride layer

2006-01-31

2006-01-31

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S724000, C438S776000

Reexamination Certificate

active

06992021

ABSTRACT:
A method of forming a silicon nitride layer. The method comprises providing a substrate having a silicon surface thereon, performing an ion implant process on the silicon surface, implanting nitrogen atoms into the silicon surface, and performing a thermal nitridation process and forming a silicon nitride layer on the substrate, wherein the silicon nitride layer comprises the silicon nitride formed on the silicon surface by reaction of the silicon surface with the nitrogen atoms contained therein.

REFERENCES:
patent: 5663087 (1997-09-01), Yokozawa
patent: 6060403 (2000-05-01), Yasuda et al.
patent: 6716757 (2004-04-01), Lin et al.

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