Method for forming a silicide region

Details Method for forming a silicide region Method for forming a silicide region

1997-09-11

2000-04-25

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438682, 438655, H01L 2128, H01L 21336, H01L 213205

Patent

active

060543876

ABSTRACT:
A method of forming a suicide layer 12 is disclosed herein. In one embodiment, a refractory metal (e.g., titanium) layer 20 is formed over a silicon (e.g., polysilicon) layer 10. The silicon layer 10 and the titanium layer 20 are then heated to a first temperature so that the silicon 10 and titanium 20 react to form a titanium silicide region 12. While applying an external force to warp the device, the titanium silicide region 12 is heated to a second temperature. This second temperature is higher than the first temperature. In one embodiment, this two-step heating process helps facilitate the transition from C49 phase TiSi.sub.2 to C54 phase TiSi.sub.2.

REFERENCES:
patent: 4690730 (1987-09-01), Tang et al.
patent: 4940509 (1990-07-01), Tso et al.
patent: 5023201 (1991-06-01), Stanasolovich et al.
patent: 5326724 (1994-07-01), Wei
patent: 5593924 (1997-01-01), Apte et al.
Ofuchi et al. "Theoretical Study on Stress-Induced C54 to C49 Phase Transition of TiSi2," Proceedings of the Symposium on Semiconductors and Integrated Circuits Technology (1995), vol. 49. p. 132-137.

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