Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-09-11
2000-04-25
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438682, 438655, H01L 2128, H01L 21336, H01L 213205
Patent
active
060543876
ABSTRACT:
A method of forming a suicide layer 12 is disclosed herein. In one embodiment, a refractory metal (e.g., titanium) layer 20 is formed over a silicon (e.g., polysilicon) layer 10. The silicon layer 10 and the titanium layer 20 are then heated to a first temperature so that the silicon 10 and titanium 20 react to form a titanium silicide region 12. While applying an external force to warp the device, the titanium silicide region 12 is heated to a second temperature. This second temperature is higher than the first temperature. In one embodiment, this two-step heating process helps facilitate the transition from C49 phase TiSi.sub.2 to C54 phase TiSi.sub.2.
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Ofuchi et al. "Theoretical Study on Stress-Induced C54 to C49 Phase Transition of TiSi2," Proceedings of the Symposium on Semiconductors and Integrated Circuits Technology (1995), vol. 49. p. 132-137.
Bowers Charles
Brady III Wade James
Holland Robby T.
Pert Evan
Telecky Jr. Frederick J.
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