Method for forming a semiconductor device

Details Method for forming a semiconductor device Method for forming a semiconductor device

2005-06-06

2008-09-30

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S243000, C438S244000, C438S246000, C438S248000, C438S249000, C438S270000, C438S301000, C438S386000, C438S589000, C257SE21652

Reexamination Certificate

active

07429509

ABSTRACT:
A method for forming a semiconductor device. A substrate is provided, wherein the substrate has recessed gates and deep trench capacitor devices therein. Protrusions of the recessed gates and upper portions of the deep trench capacitor devices are revealed. Spacers are formed on sidewalls of the upper portions and the protrusions. Buried portions of conductive material are formed in spaces between the spacers. The substrate, the spacers and the buried portions to form parallel shallow trenches are patterned to form parallel shallow trenches for defining active regions. A layer of dielectric material is formed in the shallow trenches, wherein some of the buried portions serve as buried contacts.

REFERENCES:
patent: 6331459 (2001-12-01), Gruening
patent: 6707095 (2004-03-01), Chidambarrao et al.
patent: 6844591 (2005-01-01), Tran
patent: 8015092 (2006-03-01), Jaiprakash et al.
patent: 2005/0054157 (2005-03-01), Hsu
patent: 2005/0067648 (2005-03-01), Hung et al.
patent: 2006/0228861 (2006-10-01), Kang et al.

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