Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-08-29
2010-11-23
Dang, Phuc T (Department: 2892)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S675000, C257S664000
Reexamination Certificate
active
07838420
ABSTRACT:
A packaged semiconductor device includes an interconnect layer over a first side of a polymer layer, a semiconductor device surrounded on at least three sides by the polymer layer and coupled to the interconnect layer, a first conductive element over a second side of the polymer layer, wherein the second side is opposite the first side, and a connector block within the polymer layer. The connector block has at least one electrical path extending from a first surface of the connector block to a second surface of the connector block. The at least one electrical path electrically couples the interconnect layer to the first conductive element. A method of forming the packaged semiconductor device is also described.
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Frear Darrel R.
Lytle William H.
Tang Jinbang
Clingan, Jr. James L.
Dang Phuc T
Freescale Semiconductor Inc.
Vo Kim-Marie
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