Method for forming a metal oxide film

Details Method for forming a metal oxide film Method for forming a metal oxide film

2007-05-09

2010-06-22

Cao, Phat X (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S628000, C257SE21008

Reexamination Certificate

active

07741173

ABSTRACT:
A method for forming a capacitor insulation film includes the step of depositing a monoatomic film made of a metal by supplying a metal source including the metal and no oxygen, and depositing a metal oxide film including the metal by using a CVD technique. The method provides the metal oxide film having higher film properties with a higher throughput.

REFERENCES:
patent: 6458416 (2002-10-01), Derderian et al.
patent: 6592942 (2003-07-01), Van Wijck
patent: 6767582 (2004-07-01), Elers
patent: 6858547 (2005-02-01), Metzner et al.
patent: 6908639 (2005-06-01), Basceri et al.
patent: 2001/0024387 (2001-09-01), Raaijmakers et al.
patent: 2002/0090829 (2002-07-01), Sandhu et al.
patent: 2002/0115252 (2002-08-01), Haukka et al.
patent: 2002/0142588 (2002-10-01), Basceri et al.
patent: 2003/0129826 (2003-07-01), Werkhoven et al.
patent: 2003/0207593 (2003-11-01), Derderian et al.
patent: 2004/0043557 (2004-03-01), Haukka et al.
patent: 2004/0200414 (2004-10-01), Solanki et al.
patent: 2004/0256664 (2004-12-01), Chou et al.
patent: 2005/0009335 (2005-01-01), Dean et al.
patent: 2005/0012975 (2005-01-01), George et al.
patent: 2006/0228888 (2006-10-01), Lee et al.
patent: 1 205 574 (2002-05-01), None
patent: 2002-164348 (2002-06-01), None
Chinese Office Action, dated Mar. 9, 2007 for corresponding Chinese Patent Application 200400313924.

Affiliated with

Also associated with

Rating

Method for forming a metal oxide film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a metal oxide film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a metal oxide film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4175717