Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1995-04-06
1999-07-27
Graybill, David
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438688, H01L 21283
Patent
active
059306734
ABSTRACT:
A method is provided for depositing aluminum thin film layers to form contacts in a semiconductor integrated circuit device. All or some of the deposition process occurs at relatively low deposition rates at a temperature which allows improved surface migration of the deposited aluminum atoms. Aluminum deposited under these conditions tends to fill contact vias without the formation of voids. The low temperature deposition step can be initiated by depositing aluminum while a wafer containing the integrated circuit device is being heated from cooler temperatures within the deposition chamber.
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Chen Fusen E.
Dixit Girish A.
Lin Yih-Shung
Liou Fu-Tai
Wei Che-Chia
Galanthay Therdore E.
Graybill David
Hill Kenneth C.
Jorgenson Lisa K.
STMicroelectronics Inc.
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