Method for forming a low thermal budget spacer

Details Method for forming a low thermal budget spacer Method for forming a low thermal budget spacer

2006-05-23

2006-05-23

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S786000, C438S790000

Reexamination Certificate

active

07049200

ABSTRACT:
A method of forming a sidewall spacer on a gate electrode of a metal oxide semiconductor device that includes striking a first plasma to form an oxide layer on a side of the gate electrode, where the first plasma is generated from a oxide gas that includes O3and bis-(tertiarybutylamine)silane, and striking a second plasma to form a carbon-doped nitride layer on the oxide layer, where the second plasma may be generated from a nitride gas that includes NH3and the bis-(tertiarybutylamine)silane. The first and second plasmas may be formed using plasma CVD and the bis-(tertiarybutylamine)silane flows uninterrupted between the striking of the first plasma and the striking of the second plasma.

REFERENCES:
patent: 5976991 (1999-11-01), Laxman et al.
patent: 6121096 (2000-09-01), Hopper
patent: 6153261 (2000-11-01), Xia et al.
patent: 6297115 (2001-10-01), Yu
patent: 6368928 (2002-04-01), Wang et al.
patent: 6509241 (2003-01-01), Park et al.
patent: 6630386 (2003-10-01), Yu
patent: 6677201 (2004-01-01), Bu et al.
patent: 2002/0137293 (2002-09-01), Chen et al.
patent: 2003/0020111 (2003-01-01), Bevan
patent: 2003/0032295 (2003-02-01), Park et al.
patent: 2003/0129804 (2003-07-01), Mehrotra et al.
patent: 2003/0211728 (2003-11-01), Mandal
patent: 2004/0052969 (2004-03-01), Lee et al.
patent: 2004/0063264 (2004-04-01), Zheng et al.
patent: 2004/0132257 (2004-07-01), Furuhashi et al.

Affiliated with

Also associated with

Rating

Method for forming a low thermal budget spacer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a low thermal budget spacer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a low thermal budget spacer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3620155