Method for forming a gate electrode in a semiconductor...

Details Method for forming a gate electrode in a semiconductor... Method for forming a gate electrode in a semiconductor...

2005-06-14

2005-06-14

Chaudhuri, Olik (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S259000, C438S265000, C438S266000

Reexamination Certificate

active

06905927

ABSTRACT:
A semiconductor device and method of production are disclosed, the method including forming a preliminary gate electrode on a semiconductor substrate, the preliminary gate electrode including a gate oxide layer pattern and a conductive layer pattern stacked on the gate oxide layer pattern, and performing a re-oxidation process for curing damage of the semiconductor substrate and/or a sidewall of the conductive layer pattern, when the preliminary gate electrode is formed by forming an oxide layer on an outer surface of the preliminary gate electrode and on the semiconductor substrate, by supplying an oxygen gas and a chlorine-including gas while restraining a thickness of the gate oxide layer pattern from being increased; and the semiconductor device comprising a preliminary gate electrode formed on a semiconductor substrate, the preliminary gate electrode including a gate oxide layer pattern and a conductive layer pattern stacked on the gate oxide layer pattern, and a re-oxidized semiconductor substrate and/or a sidewall of the conductive layer pattern, with damage cured therein by supplying an oxygen gas and a chlorine-including gas while restraining a thickness of the gate oxide layer pattern from being increased.

REFERENCES:
patent: 5500388 (1996-03-01), Niino et al.
patent: 6063698 (2000-05-01), Tseng et al.
patent: 6200858 (2001-03-01), Kokubu
patent: 6407008 (2002-06-01), Jia et al.
patent: 6660587 (2003-12-01), Ahn et al.

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