Method for forming a device having multiple silicide types

Details Method for forming a device having multiple silicide types Method for forming a device having multiple silicide types

2006-09-26

2006-09-26

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S655000, C438S664000

Reexamination Certificate

active

07112483

ABSTRACT:
Provided is a semiconductor device and a method for its fabrication. The device includes a semiconductor substrate, a first silicide in a first region of the substrate, and a second silicide in a second region of the substrate. The first silicide may differ from the second silicide. The first silicide and the second silicide may be an alloy silicide.

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