Method for forming a capacitor using a silicon oxynitride etchin

Details Method for forming a capacitor using a silicon oxynitride etchin Method for forming a capacitor using a silicon oxynitride etchin

1997-10-31

1998-11-17

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438255, H01L 218242

Patent

active

058375767

ABSTRACT:
A polysilicon layer is deposited on a dielectric layer. A silicon oxynitride layer is then formed on the polysilicon layer. A photoresist is imprinted with a pattern on the silicon oxynitride layer to define the storage node. An etching step is used to etch the silicon oxynitride layer and the polysilicon layer to formed the storage node. A HSG silicon is deposited on the silicon oxynitride layer and on the side walls of the storage node. An isotropically etching step is performed to remove the HSG layer on the top of the storage node. The silicon oxynitride is then removed. A dielectric layer is then formed along the surface of the storage node. A conductive layer is deposited over the dielectric layer. The conductive layer is used as the top storage node.

REFERENCES:
patent: 5554557 (1996-09-01), Koh
patent: 5618747 (1997-04-01), Lou

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