Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-04-22
2008-04-22
Tsai, H. Jey (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S396000, C257SE27086
Reexamination Certificate
active
11024981
ABSTRACT:
A method for forming a capacitor for use in a semiconductor device having electrode plugs surrounded by an insulating film and connected to underlying contact pads, includes sequentially forming an etch stop film and a mold oxide film on the insulating film and the electrode plugs, forming recesses in portions of the mold oxide film and the etching stopper film, the recesses exposing the electrode plugs, forming storage node electrodes in the recesses, filling the recesses in which the storage node electrodes are formed with an artificial oxide film, planarizing the storage node electrodes and the artificial oxide film so that the storage node electrodes are separated from one another, and selectively removing the mold oxide film and the artificial oxide film using a diluted hydrofluoric acid solution containing substantially no ammonium bifluoride.
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Hwang In-Seak
Hwang Ki-Hyun
Ko Yong-Sun
Lee Kwang Wook
Lee and Morse, P.C.
Samsung Electronics Co,. Ltd.
Tsai H. Jey
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