Method for forming a box shaped polygate

Details Method for forming a box shaped polygate Method for forming a box shaped polygate

2005-02-15

2005-02-15

Wojciechowicz, Edward (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S288000, C438S297000, C438S692000, C438S694000, C438S696000, C438S791000, C257S314000, C257S347000

Reexamination Certificate

active

06855602

ABSTRACT:
A method for forming an improved etching hardmask oxide layer in a polysilicon etching process including providing a planarized semiconductor wafer process surface including adjacent first exposed polysilicon portions and exposed oxide portions; selectively etching through a thickness portion of the exposed oxide portions; thermally growing an oxide hardmask layer over the exposed polysilicon portions to form oxide hardmask portions; exposing second exposed polysilicon portions adjacent at least one oxide hardmask portion; and, etching through a thickness portion of the second exposed polysilicon portions.

REFERENCES:
patent: 20030129840 (2003-07-01), Kumar et al.
patent: 20040036118 (2004-02-01), Abadeer et al.

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