Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-04-11
2006-04-11
Kennedy, Jennifer (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S386000
Reexamination Certificate
active
07026210
ABSTRACT:
The invention provides a method for forming a bottle-shaped trench. A semiconductor substrate having a pad stack layer and a trench formed thereon is provided. Sidewall protective layers are then formed on the upper sidewalls of the trench. A masking layer is formed at the bottom of the trench, followed by wet etching to remove the semiconductor substrate not covered by the sidewall protective layers thus forming a bottle-shaped trench. Finally, the masking layer is removed.
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Birch Stewart Kolasch & Birch,LLP
Kennedy Jennifer
Promos Technologies Inc.
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