Method for filling a hole with a metal

Details Method for filling a hole with a metal Method for filling a hole with a metal

2006-04-11

2006-04-11

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

Reexamination Certificate

active

07026242

ABSTRACT:
In a method for filling a hole with a metal, an insulating layer, a first mask layer and a second mask layer are successively formed on a semiconductor substrate. The first and second mask layers are etched using a photoresist pattern to form first and second masks. The first mask layer pattern is selectively etched using an etchant, the first mask layer pattern having a higher etching selectivity than the second layer pattern with respect to the etchant, to form a third mask layer pattern having a broadened opening. The insulating layer is etched using the second mask to form a hole in the insulating layer. A metal layer is formed in the hole and the third opening. The metal layer is planarized to form a metal plug buried in the hole without recesses or voids.

REFERENCES:
patent: 5712185 (1998-01-01), Tsai et al.
patent: 6010962 (2000-01-01), Liu et al.
patent: 6121149 (2000-09-01), Lukanc et al.
patent: 6402923 (2002-06-01), Mayer et al.
patent: 2002-88399 (2002-11-01), None
English language abstract of Korean Publication No. 2002-88399.

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