Method for fabricating trench isolation and trench substrate...

Details Method for fabricating trench isolation and trench substrate... Method for fabricating trench isolation and trench substrate...

1998-07-01

2001-06-26

Lee, Eddie C. (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S424000, C438S425000, C438S429000, C438S430000, C438S431000

Reexamination Certificate

active

06251734

ABSTRACT:

BACKGROUND OF THE INVENTION
This invention relates, in general, to microelectronics, and more particularly, to methods of manufacturing semiconductor components.
Semiconductor components having both bipolar transistors and metal-oxide-semiconductor transistors require trenches in a semiconductor substrate for two purposes. First, some of the trenches electrically isolate the different transistors from each other. Second, other trenches provide electrical contact to the semiconductor substrate. However, the methods of manufacturing the trenches are both time consuming and expensive. In fact, the trench manufacturing processes are the most expensive portion of the entire semiconductor component manufacturing process.
Accordingly, a need exists for a method of manufacturing semiconductor components that is less expensive and less time consuming.


REFERENCES:
patent: 4666556 (1987-05-01), Fulton et al.
patent: 4745081 (1988-05-01), Beyer et al.
patent: 4758531 (1988-07-01), Beyer et al.
patent: 4873205 (1989-10-01), Critchlow et al.
patent: 4980747 (1990-12-01), Hutter et al.
patent: 5003365 (1991-03-01), Havemann et al.
patent: 5065217 (1991-11-01), Verret
patent: 5105253 (1992-04-01), Polllock
patent: 5130268 (1992-07-01), Liou et al.
patent: 5217920 (1993-06-01), Mattox et al.
patent: 5436190 (1995-07-01), Yang et al.
patent: 5465003 (1995-11-01), Lur et al.

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