Method for fabricating transistor with thinned channel

Details Method for fabricating transistor with thinned channel Method for fabricating transistor with thinned channel

2005-06-15

2010-12-28

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S183000, C438S321000, C438S926000, C257SE21434, C257SE21444, C257SE21453, C257S240000, C257S241000, C257S242000, C257S243000, C257S224000, C257SE21023, C257SE21060

Reexamination Certificate

active

07858481

ABSTRACT:
A method of fabricating a MOS transistor having a thinned channel region is described. The channel region is etched following removal of a dummy gate. The source and drain regions have relatively low resistance with the process.

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