Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-11-14
2006-11-14
Pham, Thanhha S. (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S199000, C438S785000
Reexamination Certificate
active
07135361
ABSTRACT:
Methods are disclosed for treating deposited gate dielectric materials, in which the deposited dielectric is subjected to one or more non-oxidizing anneals to densify the material, one or more oxidizing anneals to mitigate material defects, and to a nitridation process to introduce nitrogen into the gate dielectric. The annealing may be performed before and/or after the nitridation to mitigate deposition and/or nitridation defects and to densify the material while mitigating formation of unwanted low dielectric constant oxides at the interface between the gate dielectric and the semiconductor substrate.
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“Fabrication of HfSiON Gate Dielectrics by Plasma Oxidation and Nitridation, Optimized for 65nm node Low Power CMOS Applications”, Seiji Inumiya, Katsuyuki Sekine, Shoko Niwa, Akio Kaneko, Motoyuki Sato, Takeshi Watanabe, Hironobu Fukui, Yoshiki Kamata, Masato Koyama, Akira Nishiyama, Mariko Takayanagi, Kazuhiro Eguchi and Yoshitaka Tsunashima, 2003 Symposium on VLSI Technology Digest of Technical Papers, 2 pgs.
Bu Haowen
Chambers James J.
Colombo Luigi
Rotondaro Antonio L. P.
Visokay Mark R.
Brady III W. James
Garner Jacqueline J.
Pham Thanhha S.
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