Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-06-14
2011-06-14
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S612000, C438S508000, C438S508000, C257S522000, C257S737000
Reexamination Certificate
active
07960272
ABSTRACT:
A new method to form an integrated circuit device is achieved. The method comprises providing a substrate. A sacrificial layer is formed overlying the substrate. The sacrificial layer is patterned to form temporary vertical spacers where conductive bonding locations are planned. A conductive layer is deposited overlying the temporary vertical spacers and the substrate. The conductive layer is patterned to form conductive bonding locations overlying the temporary vertical spacers. The temporary vertical spacers are etched away to create voids underlying the conductive bonding locations.
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Lee Jin-Yuan
Lin Shih-Hsiung
Le Dung A.
McDermott Will & Emery LLP
Megica Corporation
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