Method for fabricating silicon nitride spacer structures

Details Method for fabricating silicon nitride spacer structures Method for fabricating silicon nitride spacer structures

2007-11-13

2007-11-13

Sarkar, Asok K. (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C438S758000, C438S458000, C257SE21626

Reexamination Certificate

active

11253229

ABSTRACT:
Embodiments of methods for fabricating a spacer structure on a semiconductor substrate are provided herein. In one embodiment, a method for fabricating a spacer structure on a semiconductor substrate includes providing a substrate containing a base structure over which the spacer structure is to be formed. The spacer structure may be formed over the base structure by depositing a first layer comprising silicon nitride on the base structure, depositing a second layer comprising a silicon-based dielectric material on the first layer, and depositing a third layer comprising silicon nitride on the second layer. The first, second, and third layers are deposited in a single processing reactor.

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