Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-07-12
2011-07-12
Pham, Thanh V (Department: 2894)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S157000, C438S197000, C438S283000, C257SE21199, C257SE21438, C257SE21622
Reexamination Certificate
active
07977194
ABSTRACT:
A method for fabricating a semiconductor device includes the steps of: forming a first MISFET including first source/drain regions and a first gate electrode of a polycrystalline silicon, and a second MISFET including second source/drain regions and a second gate electrode of a polycrystalline silicon and having a gate length larger than that of the first gate electrode; and substituting the polycrystalline silicon forming the first and the second gate electrodes with a metal silicide. In the step of substituting the polycrystalline silicon with the metal silicide, the polycrystalline silicon forming the first gate electrode is totally substituted with the metal silicide and a part of polycrystalline silicon forming the second gate electrode is substituted with the metal silicide by utilizing that the gate length of the second gate electrode is larger than the gate length of the first gate electrode.
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Second Office Action, issued by the State Intellectual Property Office of the People's Republic of China, in connection with corresponding CN application No. 200610009213.6, on Feb. 5, 2010. English-language translation provided.
Fukutome Hidenobu
Hosaka Kimihiko
Kawamura Kazuo
Ohta Hiroyuki
Fujitsu Patent Center
Fujitsu Semiconductor Limited
Nguyen Duy T
Pham Thanh V
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