Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Plasma
Reexamination Certificate
2008-06-30
2010-11-02
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Plasma
C438S752000, C438S775000, C257SE21006, C257SE21170, C257SE21021, C257SE21267, C257SE21269, C257SE21293, C257SE21311, C257SE21319, C257SE21645, C257SE21646
Reexamination Certificate
active
07825014
ABSTRACT:
A method for fabricating a semiconductor device includes forming a pattern including a first layer including tungsten, performing a gas flowing process on the pattern in a gas ambience including nitrogen, and forming a second layer over the pattern using a source gas including nitrogen, wherein the purge is performed at a given temperature for a given period of time in a manner that a reaction between the first layer and the nitrogen used when forming the second layer is controlled.
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Lim et al., “The sheet resistance instability in the sub-100 nm tungsten poly-metal wordline due to an in-situ NH3pre-annealing during the sealing nitride deposition,”Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials, pp. 482-483, Tokyo (2003).
Kim Won
Lee Seung-Ryong
Lee Tae-Kwon
Lim Kwan-Yong
Sung Min-Gyu
Hynix / Semiconductor Inc.
Nhu David
Townsend and Townsend / and Crew LLP
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