Method for fabricating organic thin film transistor

Details Method for fabricating organic thin film transistor Method for fabricating organic thin film transistor

2007-07-10

2007-07-10

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S725000, C257SE21008, C257S051000, C257SE51008, C257S006000

Reexamination Certificate

active

11123120

ABSTRACT:
Disclosed herein is a method for fabricating an organic thin film transistor that includes a gate electrode, a gate insulating film, source/drain electrodes and an organic semiconductor layer formed in this order on a substrate wherein the surface of the gate insulating film on which source/drain electrodes are formed is impregnated with an inorganic or organic acid, followed by annealing. According to the method, the surface of a gate insulating film damaged by a photoresist process can be effectively recovered. In addition, organic thin film transistors having high charge carrier mobility and high on/off current ratio can be fabricated.

REFERENCES:
patent: 5347144 (1994-09-01), Garnier et al.
patent: 5796121 (1998-08-01), Gates
patent: 6326640 (2001-12-01), Shi et al.
patent: 6433359 (2002-08-01), Kelley et al.
patent: 6621098 (2003-09-01), Jackson et al.
patent: 6870181 (2005-03-01), Zhang et al.

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