Method for fabricating multi-resistive state memory devices

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S382000, C257SE21004

Reexamination Certificate

active

08062942

ABSTRACT:
A treated conductive element is provided. A conductive element can be treated by depositing either a reactive metal or a very thin layer of material on the conductive element. The reactive metal (or very thin layer of material) would typically be sandwiched between the conductive element and an electrode. The structure additionally exhibits non-linear IV characteristics, which can be favorable in certain arrays.

REFERENCES:
patent: 6972985 (2005-12-01), Rinerson et al.
patent: 7020006 (2006-03-01), Chevallier et al.
patent: 7075817 (2006-07-01), Rinerson et al.
patent: 7082052 (2006-07-01), Rinerson et al.
patent: 7227775 (2007-06-01), Rinerson et al.
patent: 7394679 (2008-07-01), Rinerson et al.
patent: 7457147 (2008-11-01), Rinerson et al.
patent: 7633790 (2009-12-01), Rinerson et al.
patent: 7889539 (2011-02-01), Rinerson et al.
patent: 2005/0018516 (2005-01-01), Chevallier et al.
patent: 2005/0174835 (2005-08-01), Rinerson et al.
patent: 2005/0243595 (2005-11-01), Rinerson et al.
patent: 2006/0018149 (2006-01-01), Rinerson et al.
patent: 2006/0245241 (2006-11-01), Rinerson et al.
patent: 2006/0245243 (2006-11-01), Rinerson et al.
patent: 2008/0293196 (2008-11-01), Rinerson et al.
patent: 2009/0045390 (2009-02-01), Rinerson et al.
patent: 2010/0157657 (2010-06-01), Rinerson et al.
patent: 2011/0186803 (2011-08-01), Rinerson et al.

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