Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1999-07-20
2000-10-17
Bowers, Charles
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438278, 438275, 438636, H01L 218236
Patent
active
061331031
ABSTRACT:
A method for fabricating a mask read only memory (ROM) is provided. A plurality of word lines functioning as a gate electrode of a cell transistor and a plurality of first anti-reflective layer patterns are sequentially formed on a semiconductor substrate. An insulator layer is formed over the entire surface of the semiconductor substrate where the plurality of first anti-reflective layer patterns and the plurality of word lines are formed. A spacer is formed at the side walls of the respective word lines by anisotropically etching the insulator layer until the plurality of word lines are exposed. A second anti-reflective layer is formed over the entire surface of the semiconductor substrate where the spacer is formed. A photoresist pattern opening the upper portion of a predetermined region of at least one word line selected among the plurality of word lines of the cell transistor to be programmed is formed on the second anti-reflective layer. An impurity is implanted into a channel region of the opened cell transistor using the photoresist pattern as an ion implantation mask.
REFERENCES:
patent: 5308777 (1994-05-01), Hong
patent: 5380676 (1995-01-01), Hsue et al.
patent: 5429975 (1995-07-01), Sheu et al.
Lee He-jueng
Yoon Ki-chang
Bowers Charles
Lee Hsien-Ming
Samsung Electronics Co,. Ltd.
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