Method for fabricating gate electrodes in a field plate...

Details Method for fabricating gate electrodes in a field plate... Method for fabricating gate electrodes in a field plate...

2006-06-13

2006-06-13

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S456000, C438S488000, C438S140000, C438S137000, C438S270000, C438S257000, C438S258000, C257S330000, C257S328000, C257S491000, C257S493000, C257S500000, C257S135000, C257S239000

Reexamination Certificate

active

07060562

ABSTRACT:
A method for fabricating gate electrodes (7) in a field plate trench transistor (1) having a cell array with a plurality of trenches (3) and a plurality of mesa regions (8) arranged between the trenches comprises the following steps: application of a gate electrode layer (7) to the cell array in such a way that the gate electrode layer (7) has depressions within or above the trenches (3), application of a mask layer (10) to the cell array, etching-back of the mask layer (10) in such a way that mask layer residues (10) remain only within the depressions of the gate electrode layer (7), and etching-back of the gate electrode layer (7) using the mask layer residues (10) as an etching mask in such a way that gate electrode layer residues (7) remain only within/above the trenches (3).

REFERENCES:
patent: 6924198 (2005-08-01), Williams et al.
patent: 2003/0173618 (2003-09-01), Zundel et al.
patent: 2004/0026737 (2004-02-01), Zundel et al.
patent: 2004/0031987 (2004-02-01), Henninger et al.
patent: 2004/0089910 (2004-05-01), Hirler et al.
patent: 2004/0104428 (2004-06-01), Henninger et al.
patent: 102 34 996 (2003-10-01), None

Affiliated with

Also associated with

Rating

Method for fabricating gate electrodes in a field plate... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating gate electrodes in a field plate..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating gate electrodes in a field plate... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3660790