Method for fabricating flash memory cell

Details Method for fabricating flash memory cell Method for fabricating flash memory cell

1999-01-12

2000-08-01

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438211, 438258, 438264, 438265, 438266, H01L 21336

Patent

active

060966025

ABSTRACT:
A method for fabricating a flash memory cell includes forming first gate insulating films and polysilicon layers in succession on a substrate, wherein the first gate insulating films and the polysilicon layers extend in a first direction, and forming buried regions in the substrate under portions of the polysilicon layers. The method includes forming second insulating films, control gates, and cap insulating films in succession on the substrate and the polysilicon layers, and forming first sidewall spacers at both sides of the control gates. The method further includes forming floating gates by patterning the polysilicon layers using the first sidewall spacers as masks, forming field insulating films between the floating gates, and forming erasure gates on the field insulating films between the floating gates.

REFERENCES:
patent: 5070032 (1991-12-01), Yuan et al.
patent: 5658813 (1997-08-01), Enomoto
patent: 5756385 (1998-05-01), Yuan et al.
patent: 5763309 (1998-06-01), Chang
patent: 5766996 (1998-12-01), Hayakawa et al.
patent: 5915176 (1999-06-01), Lim
patent: 5936889 (1999-08-01), Choi
Yoshimitsu Yamauchi et al,; "A New Cell Structure for Sub-quarter Micron High Density Flash Memory"; IEDM 1995, pp. 267-270.

Affiliated with

Also associated with

Rating

Method for fabricating flash memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating flash memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating flash memory cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-663110