Method for fabricating dual work function metal gates

Details Method for fabricating dual work function metal gates Method for fabricating dual work function metal gates

2007-08-07

2007-08-07

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21637

Reexamination Certificate

active

11017469

ABSTRACT:
A method for making PMOS and NMOS transistors60, 70on a semiconductor substrate20that includes having a gate protection layer210over the gate electrode layer110during the formation of source/drain silicides120. The method may include implanting dopants into a gate polysilicon layer 115 before forming the protection layer215.

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Haowen Bu, et al, “Semiconductor Device Having a Fully Silicided Gate Electrode and Method of Manufacture Therefor” U.S. Appl. No. 10/808,168, filed Mar. 24, 2004.
Jiong-Ping Lu, et al, “Method For Manufacturing A Semiconductor Device Having A Silicided Gate Electrode And A Method For Manufacturing An Integrated Circuit Including The Same” U.S. Appl. No. 10/810,759, filed Mar. 26, 2004.
Shaofeng Yu, et al, “A Method for Manufacturing a Silicided Gate Electrode Using a Buffer layer” Patent Application Filed Dec. 8, 2004.

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