Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers
Reexamination Certificate
2005-11-12
2008-08-26
Lebentritt, Michael S. (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Multiple layers
C438S758000, C257SE21033
Reexamination Certificate
active
07416995
ABSTRACT:
A method for fabricating a multiple layer silicon nitride film on a semiconductor substrate is provided herein. In one embodiment, a method for fabricating a multiple layer silicon nitride film on a semiconductor substrate includes providing a substrate over which the multiple layer silicon nitride film is to be formed; and forming the multiple layer silicon nitride film in a single processing reactor by: (a) depositing a base layer comprising silicon nitride on the base structure; (b) depositing a middle layer comprising a stress-controlling material on the base layer; and (c) depositing a top layer comprising silicon nitride on the middle layer. The stress-controlling material selectively increases or reduces the stress of the multiple layer silicon nitride film as compared to silicon nitride alone.
REFERENCES:
patent: 5122889 (1992-06-01), Kaneko et al.
patent: 5472890 (1995-12-01), Oda
patent: 5541434 (1996-07-01), Nicholls et al.
patent: 5670431 (1997-09-01), Huanga et al.
patent: 6501122 (2002-12-01), Chan et al.
patent: 6713127 (2004-03-01), Subramony et al.
patent: 6821825 (2004-11-01), Todd et al.
patent: 2003/0124818 (2003-07-01), Luo et al.
patent: 2003/0201540 (2003-10-01), Ahn et al.
patent: 2003/0232514 (2003-12-01), Kim et al.
patent: 2004/0061118 (2004-04-01), Yamazaki et al.
patent: 2005/0109276 (2005-05-01), Iyer et al.
patent: 2005/0287747 (2005-12-01), Chakravarti et al.
patent: 2006/0160341 (2006-07-01), Lin et al.
Smith, J. W., et al., “Thermal Chemical Vapor Deposition of Bis(Tertiary-Butylamino) Silane-baed Silicon Nitride Thin Films”,Journal of the Electrochemical Society, 152 (4), (2005),G316-G321.
Tamaoki, Naoki , et al., “Low-Temperature Solution for Silicon Nitride LPCVD Using CI-Free Inorganic Trisilylamine”, inChemical Vapor Deposition XVI and EUROCVD 14, vol. 1,Proceedings of the International Sumposium, M.D. Allendorf et al., Eds.; Proceedings Volumne Aug. 2003,693-700.
Iyer R. Suryanarayanan
Smith Jacob W.
Tandon Sanjeev
Applied Materials Inc.
Lebentritt Michael S.
Moser IP Law Group
Patel Reema
LandOfFree
Method for fabricating controlled stress silicon nitride films does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabricating controlled stress silicon nitride films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating controlled stress silicon nitride films will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4015629