Method for fabricating capacitor-under-bit line (CUB) dynamic ra

Details Method for fabricating capacitor-under-bit line (CUB) dynamic ra Method for fabricating capacitor-under-bit line (CUB) dynamic ra

1998-09-14

1999-04-13

Chang, Joni

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438254, H01L 218242

Patent

active

058937340

ABSTRACT:
DRAM devices are made having self-aligned tungsten landing plug contacts to gate electrodes for capacitor-under-bit line (CUB) for reduced aspect ratio contact openings. A planar insulating layer is formed, and openings for bit line contacts, node contacts, and contacts on the chip periphery are concurrently etched for metal landing plugs. A TiN/Ti/N.sup.+ polysilicon multilayer is deposited and annealed to form low contact resistance to the substrate A tungsten (W) layer is then deposited and etched back to form W landing plug contacts in the contact openings, which reduce the aspect ratio for the multilevel contacts. A Si.sub.3 N.sub.4 etch-stop layer and a BPSG are deposited and planarized. Capacitor openings are etched in the BPSG aligned over the node contacts. A conformal conducting layer and a planarized polymer are deposited and polished back to complete the bottom electrodes in the capacitor openings. After removing the polymer, an interelectrode dielectric layer and a conformal conducting layer (top electrode) are deposited and patterned to complete the capacitors. A planar insulating layer is formed and the interlevel contact openings etched with reduced aspect ratios to the landing plugs. W/TiN plugs are formed in the openings, and a first level of metal interconnections is formed.

REFERENCES:
patent: 4822753 (1989-04-01), Pintchovski et al.
patent: 5045899 (1991-09-01), Arimoto
patent: 5250467 (1993-10-01), Somekh et al.
patent: 5281549 (1994-01-01), Fazan et al.
patent: 5332685 (1994-07-01), Park et al.
patent: 5648291 (1997-07-01), Sung
patent: 5700731 (1997-12-01), Lin et al.

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