Method for fabricating capacitor in integrated circuit

Details Method for fabricating capacitor in integrated circuit Method for fabricating capacitor in integrated circuit

1998-11-17

2000-12-05

Nelms, David

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438238, 438239, 438253, 438396, 438398, H01L 218234

Patent

active

061566004

ABSTRACT:
A method for fabricating a capacitor in an integrated circuit, using tantalum oxide as the dielectric layer to obtain a higher capacitance. A barrier layer is formed between the polysilicon layer and the tantalum oxide layer to prevent the formation of a silicon oxide layer. Thus, that capacitance of the capacitor is not reduced by the additional thickness of the silicon oxide layer.

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patent: 6001741 (1999-12-01), Alers

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