Method for fabricating a thin film transistor having a taper-etc

Details Method for fabricating a thin film transistor having a taper-etc Method for fabricating a thin film transistor having a taper-etc

1995-08-23

1998-03-03

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438906, 438978, H01L 2184

Patent

active

057233713

ABSTRACT:
A method for fabricating a thin film transistor having a taper-etched semiconductor film includes the steps of forming a gate electrode on a bare substrate; forming an insulating film on the gate electrode;p forming a semiconductor film by forming an amorphous silicon film layer on the insulating film and forming an N.sup.+ amorphous silicon film on the amorphous silicon film layer, descumming photoresist residue from the semiconductor film by using a specified gas and taper etching a part of the semiconductor film, which is uncoated with the photoresist, by using HCl and SF.sub.6, to form a gentle slope in the etching profile resulting from overetching.

REFERENCES:
patent: 5034339 (1991-07-01), Tanaka et al.
patent: 5393682 (1995-02-01), Liu
patent: 5441905 (1995-08-01), Wu
patent: 5496752 (1996-03-01), Nasu et al.

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