Method and apparatus for forming buried oxide layers within sili

Details Method and apparatus for forming buried oxide layers within sili Method and apparatus for forming buried oxide layers within sili

1995-09-14

1998-03-03

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438438, 438407, 438766, H01L 21762

Patent

active

057233721

ABSTRACT:
A method and apparatus for forming buried oxide layers within silicon wafers comprising several steps. Recesses are formed in a silicon wafer. Light ions are implanted in the silicon wafer at a depth that is smaller than the depth of the recesses to form bubbles of the light ions in the silicon wafer. The light ions are evaporated from the silicon wafer to leave cavities in the place of the bubbles. The cavities are oxidized through the recesses to form a buried layer of silicon oxide.

REFERENCES:
patent: 4704302 (1987-11-01), Bruel et al.
patent: 5372952 (1994-12-01), Aronowitz
patent: 5374564 (1994-12-01), Bruel
European Search Report from European Patent Application Serial Number 94830452.2, filed Sep. 23, 1994.
International Electron Devices Meeting 1986, Dec. 7-10, 1986, New York pp. 431-434, E.J. Zorinsky et al. "The Islands Method--A Manufacturable Porous Silicon Soi Technology".

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