Method for fabricating a stacked, or crown shaped, capacitor str

Details Method for fabricating a stacked, or crown shaped, capacitor str Method for fabricating a stacked, or crown shaped, capacitor str

1998-04-24

1999-07-27

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438398, H01L 218242

Patent

active

059306254

ABSTRACT:
A method for creating a stacked, or crown shaped, capacitor structure, with increased surface area, obtained using a storage node electrode, comprised of HSG silicon grains on the surface of the storage node electrode, has been developed. An in situ procedure, allows HSG silicon seeds to be selectively formed, only on the exposed surfaces of a amorphous silicon storage node electrode shape, in an LPCVD system, directly after an HF preclean step. A subsequent anneal, again performed in situ, in the LPCVD system, results in the formation of HSG silicon grains, converted from the HSG silicon seeds.

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