Method for fabricating a semiconductor memory device

Details Method for fabricating a semiconductor memory device Method for fabricating a semiconductor memory device

1996-09-20

1999-02-02

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438233, 438241, 438264, 438276, H01L 218234

Patent

active

058664564

ABSTRACT:
A semiconductor memory device is provided which includes: a memory cell portion including at least one gate electrode formed on a semiconductor substrate and a plurality of source/drain regions formed in the semiconductor substrate and extending parallel to each other and perpendicular to the gate electrode, the gate electrode and the plurality of source/drain regions constituting a plurality of first conductivity type channel transistors; and a peripheral circuitry portion including a first conductivity type channel transistor having a gate electrode formed on the semiconductor substrate and source/drain regions; wherein channels of the first conductivity type channel transistors in the memory cell portion each have a higher impurity concentration than a channel of the first conductivity type channel transistor in the peripheral circuitry portion.

REFERENCES:
patent: 5045489 (1991-09-01), Gill et al.
patent: 5432107 (1995-07-01), Uno et al.
patent: 5614432 (1997-03-01), Goto

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