Semiconductor memory device having capacitor of thin film transi

Details Semiconductor memory device having capacitor of thin film transi Semiconductor memory device having capacitor of thin film transi

1996-08-09

1998-08-18

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257313, 365149, H01L 2992, G11C 11401, G11C 11409

Patent

active

057961379

ABSTRACT:
The gate of a selection transistor is connected to a word line and the source thereof is connected to a bit line. The drain of the selection transistor is connected to a storage node constituting a capacitor of thin film transistor structure. The capacitor has a plate electrode insulated from the storage node, that portion of the plate electrode which is disposed in opposition to the storage node is formed to have an impurity concentration lower than the remaining portion thereof and an inverted layer is formed in the corresponding portion according to data stored in the storage node. The plate electrode is connected to pulse generation means, a pulse signal is output from the pulse generation means in the data readout operation and the potential of the plate electrode is raised by the pulse signal.

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M. Aoki et al., "A 1.5-V Dram for Battery-Based Applications", Oct. 1989, pp. 1206-1212, IEEE Journal of Solid-State Circuits, vol. 24, No. 5.

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