Method for fabricating a semiconductor memory cell in a DRAM

Details Method for fabricating a semiconductor memory cell in a DRAM Method for fabricating a semiconductor memory cell in a DRAM

1997-05-02

1998-07-14

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438595, 438675, H01L 218242

Patent

active

057803390

ABSTRACT:
This present invention is a method of fabricating a semiconductor memory cell in a DRAM. This invention utilizes a inter plug technique and nitride sidewall spacers to improve deep node contact etching damage and reduce the number of mask steps for typical landing pad processes. Thus, the method of this invention allows the manufacture of a semiconductor memory cell that reduces the difficulties due to the high aspect ratio of the contact hole of a storage node.

REFERENCES:
patent: 5296400 (1994-03-01), Park et al.
patent: 5332685 (1994-07-01), Park et al.
patent: 5441908 (1995-08-01), Lee et al.
patent: 5492850 (1996-02-01), Ryou

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