Method for fabricating a semiconductor gate structure

Details Method for fabricating a semiconductor gate structure Method for fabricating a semiconductor gate structure

2007-10-15

2010-06-29

Pham, Thanhha (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S585000, C257SE21632

Reexamination Certificate

active

07745292

ABSTRACT:
A method of making a semiconductor device is disclosed. A mask if formed over a first and a second region of a semiconductor body, and a vertical diffusion barrier is formed in a region between the first and second regions. A mask is then formed over the second region and the first region is left unmasked. The semiconductor body is exposed to a dopant, so that the first region is doped and the second region is blocked from the dopant by the mask and by the vertical diffusion barrier.

REFERENCES:
patent: 2007/0243683 (2007-10-01), Niimi et al.
patent: 2008/0017921 (2008-01-01), Jung

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