Method for fabricating a semiconductor device having different g

Details Method for fabricating a semiconductor device having different g Method for fabricating a semiconductor device having different g

1999-05-20

2000-10-24

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438301, 438305, 438763, 438773, 438981, H01L 21336, H01L 2131

Patent

active

061366579

ABSTRACT:
A method for fabricating a semiconductor device with different gate oxide layers is provided. In this method, oxidation is controlled in accordance with the active area dimension so that the oxide grows more thinly at a wider active width in a peripheral region, and grows more thickly at a narrower active width in a cell array region. In this method, a gate pattern is formed over a semiconductor substrate having different active areas. Gate spacer are formed and an active-dimension-dependant oxidation process is then performed to grow oxide layers of different thicknesses in the cell array region and the peripheral region.

REFERENCES:
patent: 5937310 (1999-08-01), Gardner et al.

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