Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-07-31
2007-07-31
Smith, Bradley K. (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S230000, C257SE21633
Reexamination Certificate
active
10711038
ABSTRACT:
The present invention discloses a method for fabricating a semiconductor device. A substrate is provided. At least one first and second gate structure, having sidewalls, are included on a surface of the substrate. A first ion implantation process is performed to form a shallow-junction doping region of a first conductive type in the substrate next to each of the sidewalls of the first gate structure, followed by the formation of offset spacers on each of the sidewalls of the first and second gate structure. A second ion implantation process is performed to form a shallow-junction doping region of a second conductive type in the substrate next to the offset spacer on each of the sidewalls of the second gate structure.
REFERENCES:
patent: 6255152 (2001-07-01), Chen
patent: 6900088 (2005-05-01), Nanjo et al.
Chin Yu-Lung
Lai Wen-Koi
Lee Tai-Yuan
Lee Tung-Hsing
Lee Yi-Chia
Hsu Winston
Smith Bradley K.
United Microelectronics Corp.
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