Method for fabricating a semiconductor device

Details Method for fabricating a semiconductor device Method for fabricating a semiconductor device

2006-03-16

2010-10-19

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S261000, C438S288000, C257SE21679, C257SE27103

Reexamination Certificate

active

07816203

ABSTRACT:
A method is provided for fabricating a semiconductor device having a gate electrode overlying a gate insulator. The method, in accordance with one embodiment, comprises depositing a layer of spin on glass overlying the gate electrode, the layer of spin on glass comprising a substantially UV opaque material. The layer of spin on glass is heated to a temperature less than about 450° C., and all subsequent process steps in the fabrication of the device are limited to temperatures less than about 450° C.

REFERENCES:
patent: 6774432 (2004-08-01), Ngo et al.
patent: 7442998 (2008-10-01), Wei et al.
patent: 2004/0175926 (2004-09-01), Wang et al.
patent: 2006/0128166 (2006-06-01), Nakata et al.
Quirk et al. “LPCVD (Low pressure CVD)”, Semiconductor Manufacturing Technology, Prentice-Hall 2001, p. 271, 273-274.
Quirk et al., “Spin-On-Dielectrics,” Semiconductor Manufacturing Technology, prentice-Hall, 2001, p. 287, Spin-on-Glass section; second paragraph, line 4).

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